| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial growth system which prevents trouble that, when carrying a substrate to be processed out of a furnace, a susceptor is also carried up together and dropped out of a susceptor port by a bridge formed between the substrate to be processed and the susceptor when forming an epitaxial growth film, while making the epitaxial growth system thin and lightweight for reducing heat capacity of the susceptor.SOLUTION: The epitaxial growth system includes a reaction chamber, the susceptor, the susceptor port, gas supply means and heating means. The susceptor and the susceptor port are formed from materials of different thermal expansion coefficients, such that fitting states can be provided by a difference between the thermal expansion coefficients of the susceptor and the susceptor port where the susceptor can be attached to and detached from the susceptor port at a room temperature and the attachment and the detachment cannot be performed at a temperature of carrying the substrate to be processed out of the furnace after the epitaxial growth film is formed. |
