| 发明名称 |
MAGNETIC DEVICE |
| 摘要 |
A magnetic device includes a free layer including a first magnetization layer; a pinned layer including a second magnetization layer; and a tunnel barrier layer provided between the free layer and the pinned layer. At least one selected from the free layer and the pinned layer includes a synthetic antiferromagnetic (SAF) structure formed of a first ferromagnetic layer, a second ferromagnetic layer, and a ruthenium-rhodium (Ru—Rh) alloy layer provided between the first and second ferromagnetic layers. |
| 申请公布号 |
US2015340600(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514693852 |
申请日期 |
2015.04.22 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Kee-won;PARK Sang-hwan;KIM Sang-yong |
| 分类号 |
H01L43/10;H01L27/22;H01L43/02 |
主分类号 |
H01L43/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic device comprising:
a free layer comprising a first magnetization layer; a pinned layer comprising a second magnetization layer; and a tunnel barrier layer provided between the free layer and the pinned layer, wherein at least one selected from the first magnetization layer and the second magnetization layer comprises a synthetic antiferromagnetic (SAF) structure formed of a first ferromagnetic layer, a second ferromagnetic layer, and a ruthenium-rhodium (Ru—Rh) alloy layer provided between the first and second ferromagnetic layers. |
| 地址 |
Suwon-si KR |
