SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes: a micro CMOS region including a micro CMOS and a micro interconnect that is connected to the micro CMOS; and a high breakdown voltage device region including a high breakdown voltage device that has a breakdown voltage higher than that of the micro CMOS, and drain and source interconnects that are connected to the high breakdown voltage device and have a width greater than that of the micro interconnect in a plan view. In the high breakdown voltage device region, an electrically-isolated dummy interconnect is not provided adjacent to at least the drain interconnect and the source interconnect.

主权项

1. A semiconductor device comprising:
a first region including a first transistor and a first interconnect that is connected to the first transistor; and a second region including a second transistor in which a thickness of a gate insulating film is greater than that of a gate insulating film in the first transistor and a second interconnect that is connected to the second transistor and has a width greater than that of the first interconnect in a plan view, wherein an electrically-isolated dummy interconnect is provided in the first region, wherein the electrically-isolated dummy interconnect is electrically connected to the first transistor.