Single side polishing using shape matching

摘要

A method of polishing a wafer is disclosed that includes determining a removal profile. The wafer is measured to determine a starting wafer profile and then the wafer is polished. The wafer is again measured after being polished to determine a polished wafer profile. The starting wafer profile and the polished wafer profile are compared to each other to determine the removal profile by computing the amount and shape of material removed from the first wafer during polishing.

主权项

1. A method of polishing a wafer, the method comprising:
measuring a first wafer to determine a starting wafer profile; polishing the first wafer after determining the starting wafer profile; measuring the first wafer after polishing to determine a polished wafer profile; determining a removal profile by comparing the starting wafer profile and the polished profile to compute the amount and shape of material removed from the first wafer during polishing; measuring a second wafer to determine an initial profile; determining an initial predicted profile by comparing the initial profile of the second wafer to the removal profile of the first wafer; and determining an initial predicted flatness parameter of an initial predicted polished surface from the initial predicted profile.