NITRIDE SEMICONDUCTOR LAYERED SUBSTRATE AND NITRIDE SEMICONDUCTOR LAYERED SUBSTRATE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor layered substrate which inhibits generation of convexo-concave on a top face (interface) of a specific nitride semiconductor layer; and provide a manufacturing method of the nitride semiconductor layered substrate.SOLUTION: A nitride semiconductor layered substrate 10A comprises: a first nitride semiconductor layer 13; a second nitride semiconductor layer 14A which is formed on a top face of the first nitride semiconductor layer and has bandgap larger than that of the first nitride semiconductor layer 13 and forms hetero junction with the first nitride semiconductor layer 13; and a third nitride semiconductor layer 15 which is formed on a top face of the second nitride semiconductor layer 14A and has bandgap larger than that of the first nitride semiconductor layer 13 and smaller than that of the second nitride semiconductor layer 14A. The second nitride semiconductor layer 14A includes a first region which is formed at an interface with the first nitride semiconductor layer 13 and formed by nitriding a raw material layer.