Three dimensional gate structures with horizontal extensions

摘要

A device on an integrated circuit includes a stack of alternating semiconductor lines and insulating lines, and a gate structure over the stack of semiconductor lines. The gate structure includes a vertical portion adjacent the stack on the at least one side, and horizontal extension portions between the semiconductor lines. Sides of the insulating lines can be recessed relative to sides of the semiconductor lines, so at least one side of the stack includes recesses between semiconductor lines. The horizontal extension portions can be in the recesses. The horizontal extension portions have inside surfaces adjacent the sides of the insulating lines, and outside surfaces that can be flush with the sides of the semiconductor lines. The device may include a second gate structure spaced away from the first mentioned gate structure, and an insulating element between horizontal extension portions of the second gate structure and the first mentioned gate structure.

主权项

1. A device on an integrated circuit, comprising:
a stack of alternating semiconductor lines and insulating lines; anda gate structure over the stack of semiconductor lines, the gate structure including a vertical portion adjacent the stack on at least one side of the stack, and horizontal extension portions between the semiconductor lines.