| 摘要 |
PROBLEM TO BE SOLVED: To reduce metal contamination in a processing chamber.SOLUTION: There is provided a dry cleaning method for a plasma processing apparatus including: a processing container having a member containing chromium (Cr); a mounting table which is disposed in the processing container and on which a substrate is mounted; and a gas supply source for supplying a gas into the processing container. The dry cleaning method includes a first step of supplying a first cleaning gas containing oxygen into the processing container and supplying high-frequency power or microwave power to generate plasma of the first cleaning gas, and a second step of supplying a second cleaning gas containing bromine into the processing container after the first step. |
