发明名称 |
Metal amide deposition precursors and their stabilization with an inert ampoule liner |
摘要 |
Described are methods and apparatuses for the stabilization of precursors, which can be used for the deposition of manganese-containing films. Certain methods and apparatus relate to lined ampoules and/or 2-electron donor ligands. |
申请公布号 |
US9196474(B2) |
申请公布日期 |
2015.11.24 |
申请号 |
US201414193088 |
申请日期 |
2014.02.28 |
申请人 |
Applied Materials, Inc. |
发明人 |
Knapp David;Thompson David |
分类号 |
H01L21/31;H01L21/02;C23C16/34;C23C16/448;C23C16/455 |
主分类号 |
H01L21/31 |
代理机构 |
Servilla Whitney LLC |
代理人 |
Servilla Whitney LLC |
主权项 |
1. An apparatus for generating a chemical precursor gas, the apparatus comprising:
a canister having a sidewall, a top, and a bottom forming an interior volume; an inlet port and an outlet port in fluid communication with the interior volume; a lining on at least part of the sidewall, top or bottom, wherein the lining comprises an inert metal oxide; and a precursor in the interior volume of the canister, wherein the precursor contains at least one Mn—N bond and a 2-electron donor ligand. |
地址 |
Santa Clara CA US |