发明名称 Metal amide deposition precursors and their stabilization with an inert ampoule liner
摘要 Described are methods and apparatuses for the stabilization of precursors, which can be used for the deposition of manganese-containing films. Certain methods and apparatus relate to lined ampoules and/or 2-electron donor ligands.
申请公布号 US9196474(B2) 申请公布日期 2015.11.24
申请号 US201414193088 申请日期 2014.02.28
申请人 Applied Materials, Inc. 发明人 Knapp David;Thompson David
分类号 H01L21/31;H01L21/02;C23C16/34;C23C16/448;C23C16/455 主分类号 H01L21/31
代理机构 Servilla Whitney LLC 代理人 Servilla Whitney LLC
主权项 1. An apparatus for generating a chemical precursor gas, the apparatus comprising: a canister having a sidewall, a top, and a bottom forming an interior volume; an inlet port and an outlet port in fluid communication with the interior volume; a lining on at least part of the sidewall, top or bottom, wherein the lining comprises an inert metal oxide; and a precursor in the interior volume of the canister, wherein the precursor contains at least one Mn—N bond and a 2-electron donor ligand.
地址 Santa Clara CA US