| 发明名称 | Automatically adjusting baking process for low-k dielectric material | ||
| 摘要 | A method includes etching a low-k dielectric layer on a wafer to form an opening in the low-k dielectric layer. An amount of a detrimental substance in the wafer is measured to obtain a measurement result. Process conditions for baking the wafer are determined in response to the measurement result. The wafer is baked using the determined process conditions. | ||
| 申请公布号 | US9196551(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201113219317 | 申请日期 | 2011.08.26 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chou Chia-Cheng;Ko Chung-Chi;Lin Keng-Chu;Jeng Shwang-Ming |
| 分类号 | H01L21/00;H01L21/66;H01L21/3105;H01L21/768 | 主分类号 | H01L21/00 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method comprising: etching a low-k dielectric layer on a wafer to form an opening in the low-k dielectric layer; measuring an amount of a detrimental substance in the wafer to obtain a measurement result; determining process conditions for baking the wafer in response to the measurement result; and baking the wafer using the process conditions, wherein the measuring the amount of the detrimental substance is performed in a loadlock, and the baking the wafer is performed in a chamber, and wherein the chamber is in a same production tool as the loadlock. | ||
| 地址 | Hsin-Chu TW | ||