发明名称 半導体装置
摘要 <p>In a semiconductor device in which an IC unit and a coil antenna connected to said IC unit are formed on the same substrate, the coil antenna is formed by conductor layers (ANT1) and (ANT2) that are mutually different layers. An interlayer insulating film is interposed between the conductor layers (ANT1) and (ANT2). The conductor layers (ANT1) and (ANT2) have overlapping sections (OVL) overlapping via the interlayer insulating film in the direction orthogonal to the principal surface of a substrate, wherein the width of the conductor layers (ANT1) and (ANT2) at the overlapping sections (OVL) is smaller than the width of the other sections.</p>
申请公布号 JP5819737(B2) 申请公布日期 2015.11.24
申请号 JP20120010000 申请日期 2012.01.20
申请人 发明人
分类号 H01L21/822;H01L27/04;H01L29/786;H01Q1/38;H01Q1/40 主分类号 H01L21/822
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