| 摘要 |
Provided is a wafer processing method capable of processing a wafer in order not to make a bending part on the wafer formed by sliding a single crystalline ingot. As the wafer processing method for processing the wafer which is formed by slicing the single crystalline ingot, a crystal deformation removal process of removing crystal deformation existing in an outer circumference of the wafer is performed. In the crystal deformation removal process, a laser beam of a wavelength having permeability as to the wafer is irradiated along an outer circumference edge at a predetermined position in both insides rather than the outer circumference edge from one side of the wafer, and a ring type shield tunnel is formed by growing pores and an amorphous material shielding the pores over a plane at another side from one plane of the wafer. And, the method removes the outer circumference part where the crystal deformation remains, by breaking the wafer in the area of the shield tunnel by giving external force along the shield tunnel. |
