| 发明名称 |
STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND READ METHOD THEREOF |
| 摘要 |
A read method of a nonvolatile memory device includes reading data from a selected memory area of the nonvolatile memory device according to a first read voltage; detecting and correcting an error of the read data; and deciding a second read voltage for reading the selected memory area when an error of the read data is uncorrectable. The second read voltage is decided according to either the number of logical 0s or 1s included in the read data, or a ratio of logical 1s to logical 0s in the read data. |
| 申请公布号 |
US2015332777(A1) |
申请公布日期 |
2015.11.19 |
| 申请号 |
US201514692494 |
申请日期 |
2015.04.21 |
| 申请人 |
YOON SANGYONG;KWAK DONGHUN;PARK KITAE;CHOI MYUNG-HOON;HAN SEUNG-CHEOL |
发明人 |
YOON SANGYONG;KWAK DONGHUN;PARK KITAE;CHOI MYUNG-HOON;HAN SEUNG-CHEOL |
| 分类号 |
G11C16/26;G06F11/10;G11C29/52;G11C16/04 |
主分类号 |
G11C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A read method of a nonvolatile memory device comprising:
reading data from a selected memory area of the nonvolatile memory device according to a first read voltage; detecting an error in the read data; correcting the detected error in the read data when the error is correctable; and deciding a second read voltage for reading the data from the selected memory area when the detected error is uncorrectable, the second read voltage being decided according to either a number of logical 0s or is included in the read data, or a ratio of logical is to logical 0s in the read data. |
| 地址 |
SEOUL KR |
