| 摘要 |
A method for measuring a substrate in the form of a lithography mask or a mask blank for producing a lithography mask comprises the alignment of a substrate coordinate system (SKS), predetermined by a first marker structure, relative to a position measurement system, a measurement of actual position data (IST) of a second marker structure with predetermined intended position data (POS) in the substrate coordinate system (SKS), and an establishment of a transformation (T) of the substrate coordinate system (SKS) into a transformed substrate coordinate system (tSKS), wherein the transformation (T) is established in such a way that deviations between the actual position data (IST) and the intended position data (POS) of the second marker structure are reduced. |
