| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of writing SRAM data of SRAM in a nonvolatile memory unit, and capable of realizing a high-speed operation in the SRAM.SOLUTION: In a nonvolatile semiconductor memory device 1, since voltage required for writing SRAM data at a nonvolatile memory unit 16 can be lowered, a film thickness of each gate insulation film of a first access transistor 21a, a second access transistor 21b, a first load transistor 22a, a second load transistor 22b, a first drive transistor 23a, and a second drive transistor 23b, constituting SRAM 15 connected to the nonvolatile memory unit 16 is formed to be 4 nm or less. The SRAM 15 can be operated at a high speed at a lower power source voltage, corresponding to that, thus, SRAM data of the SRAM 15 can be written in the nonvolatile memory unit 16 and a high speed operation of the SRAM 15 is realized. |
