| 摘要 |
The present invention is a method for evaluating an SOI substrate, characterized by having: a step in which, in advance, a device is formed on a measurement SOI substrate and the relationship between power leakage during application of a radio frequency and the interface state density of the measurement SOI substrate is determined, or the interface state density is converted into resistance and the relationship between the converted resistance and the power leakage is determined; a step in which the interface state density is determined by measuring the interface state density of the SOI substrate to be evaluated, or the resistance that is converted on the basis of the interface state density is determined; and a step in which the power leakage of the to-be-evaluated SOI substrate is evaluated from the measured interface state density of the to-be-evaluated SOI substrate on the basis of the predetermined relationship between the interface state density and the power leakage, or in which the power leakage of the to-be-evaluated SOI substrate is evaluated from the resistance that is converted from the measured interface state density of the to-be-evaluated SOI substrate on the basis of the predetermined relationship between the resistance and the power leakage. This makes it possible to evaluate a substrate that is suitable for a radio frequency using a method that is as simple as possible without actually measuring the characteristics of the radio frequency. |
