LATERAL TYPE PHOTODIODE, IMAGE SENSOR INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE PHOTODIODE AND THE IMAGE SENSOR.

摘要

Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

主权项

1. A lateral type photodiode comprising:
a substrate; an insulation mask layer on the substrate; and a first type semiconductor layer, an active layer, and a second type semiconductor layer contacting a surface of the insulation mask layer and substantially parallel to the surface of the insulation mask layer.