| 摘要 |
Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a first pixel including a first photodiode and a first gate; a second pixel adjacent the first pixel and including a second photodiode and a second gate; and a barrier layer between the first photodiode and the second photodiode. The barrier layer can be formed by implanting ions into a semiconductor substrate at a region between adjacent photodiodes. A shallow trench isolation (STI) can be omitted in the regions between adjacent photodiodes by using the ion-implanted barrier layer to isolate the photodiodes from each other.
|
