发明名称 LED WITH SHAPED GROWTH SUBSTRATE FOR SIDE EMISSION
摘要 <p>An array of optical features is formed in a surface of a relatively thick growth substrate wafer. LED layers are epitaxially grown over the opposite surface of the growth substrate wafer. The LED layers include an active layer that emits light towards the growth substrate wafer. The resulting LED wafer is singulated to form individual LED dies having a growth substrate portion, wherein each growth substrate portion has at least one of the optical features. The optical features redirect a majority of light emitted from the active layer to exit the LED die through sidewalls of the growth substrate portion. The side-emitting LED die is mounted in a reflective cup and encapsulated with a phosphor material. The LED light thus energizes phosphor grains that are not overlying the LED die, so less phosphor light is absorbed by the LED die and efficiency is improved.</p>
申请公布号 EP2943986(A1) 申请公布日期 2015.11.18
申请号 EP20140701126 申请日期 2014.01.06
申请人 KONINKLIJKE PHILIPS N.V. 发明人 BUTTERWORTH, MARK MELVIN
分类号 H01L33/00;H01L33/20;H01L33/46 主分类号 H01L33/00
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