| 摘要 |
<p>The process for smoothing a rough surface of a first substrate made of a semiconductor alloy based on at least two elements chosen from Ga, As, Al, In, P and N is implemented by placing a second substrate facing the first substrate so that the rough surface is placed facing a surface of the second substrate. The first and second substrates are separated by a distance d of at least 10μm, the facing portions of the two substrates defining a confinement space. The first substrate is then heated so as to partially desorb one of the elements of said alloy and to reach the saturated vapor pressure of this element in the confinement space and to obtain a surface atom mobility that is sufficient to reduce the roughness of the rough surface.</p> |
