发明名称 Mask read-only memory
摘要 <p>A novel mask read-only memory is provided. After the mask read-only memory leaves the factory, the mask read-only memory has two types of cell structures. The first type cell structure records a first storing state (e.g. the logic state "1 "), and the second type cell structure records a second storing state (the logic state "0").</p>
申请公布号 EP2843664(B1) 申请公布日期 2015.11.18
申请号 EP20130182624 申请日期 2013.09.02
申请人 EMEMORY TECHNOLOGY INC. 发明人 WU, MENG-YI;HUANG, KUAN-MING;HUANG, CHIH-HAO
分类号 G11C11/56;G11C17/10;H01L27/112 主分类号 G11C11/56
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