发明名称 |
Mask read-only memory |
摘要 |
<p>A novel mask read-only memory is provided. After the mask read-only memory leaves the factory, the mask read-only memory has two types of cell structures. The first type cell structure records a first storing state (e.g. the logic state "1 "), and the second type cell structure records a second storing state (the logic state "0").</p> |
申请公布号 |
EP2843664(B1) |
申请公布日期 |
2015.11.18 |
申请号 |
EP20130182624 |
申请日期 |
2013.09.02 |
申请人 |
EMEMORY TECHNOLOGY INC. |
发明人 |
WU, MENG-YI;HUANG, KUAN-MING;HUANG, CHIH-HAO |
分类号 |
G11C11/56;G11C17/10;H01L27/112 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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