| 摘要 |
The present invention relates to a semiconductor device including an embedded redistribution layer and a manufacturing method thereof and, more specifically, relates to a semiconductor device including an embedded redistribution layer and a manufacturing method thereof, capable of reducing a thickness thereof, a number of processes, and manufacturing costs by embedding the redistribution layer to form a layer outside in an inner side of the semiconductor device. The present invention provides the semiconductor device including the embedded redistribution layer and the manufacturing method thereof, capable of reducing an entire thickness of a chip, the number of process, and the manufacturing costs by forming a structure to embed the redistribution layer formed on each chip of a wafer level in the chip unlike an existing redistribution layer to form the layer with two or more passivation layers outside. |
