METHOD FOR FORMING WIRING FILM, TRANSISTOR, AND ELECTRONIC DEVICE

摘要

A wiring film having excellent adhesion and a low resistance is formed. A barrier film 22 having copper as a main component and containing oxygen is formed on an object 21 to form a film thereon by introducing an oxygen gas into a vacuum chamber 2 in which the object 21 to form a film thereon and sputtering a pure copper target 11. Then, after the introduction of the oxygen gas is stopped, a low-resistance film 23 made of pure copper is formed by sputtering the pure copper target 11. Since the barrier film 22 and the low-resistance film 23 have copper as the main component, they can be patterned at a time. Since the low-resistance film 23 has a resistance lower than that of the barrier film 22, the resistance of the whole wiring film 25 is reduced. Since the barrier layer 22 has high adhesion to glass and silicon, the whole wiring film 25 has high adhesion.