| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of a void or dislocation in formation of an element isolation region.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a mask film 8 on one principal surface of a semiconductor substrate 1; forming on the semiconductor substrate 1, a first element isolation trench 6a having a first width W1 and a third element isolation trench 6c having a third width W3 larger than the first width W1 by using the mask film 8 as a mask; forming a low fluidity thin film 9 which is completely embedded in the first element isolation trench 6a and which is not completely embedded in the third element isolation trench 6c; removing the low fluidity thin film 9 formed in the third element isolation trench 6c to expose a bottom face of the third element isolation trench 6c; and forming a low fluidity second insulation film 5 so as to be embedded in the third element isolation trench 6c with the bottom face exposed to completely cover a top face of the mask film 8. According to the present embodiment, the occurrence of a void or dislocation in formation of an element isolation region. |
