发明名称 GATE DRIVE CIRCUIT OF VOLTAGE-DRIVEN POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve such a problem of a system for protecting a semiconductor switch device upon occurrence of arm short circuit, by detecting the absolute value of current and determining occurrence of arm short circuit when it exceeds a set value, that since a large current is cut off, there is a great risk of leading to device destruction.SOLUTION: A gate drive circuit for driving a voltage-driven power semiconductor device applied to a power converter is provided with short circuit current detection means for detecting a short circuit current flowing through the power semiconductor device, and short circuit current integration means for integrating the current detection value. When the integration value of the short circuit current integration means goes above a set value, the gate is cut off forcibly.
申请公布号 JP2015202035(A) 申请公布日期 2015.11.12
申请号 JP20150056560 申请日期 2015.03.19
申请人 FUJI ELECTRIC CO LTD 发明人 TAKIZAWA AKITAKE
分类号 H02M1/08;H02M1/00;H03K17/08;H03K17/16;H03K17/687 主分类号 H02M1/08
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