SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP

摘要

The present invention is applicable to a semiconductor device having a plurality of chips being stacked with a TSV structure in which adjacent ones of the chips are connected to each other via a plurality of through electrodes. Each of the chips includes a plurality of TSV array portions provided so as to correspond to a plurality of channels. The TSV array portions include a TSV array portion that contributes to an input and an output depending upon the number of the chips being stacked, and a pass-through TSV array portion that is not connected to an input/output circuit.

主权项

1. A semiconductor device comprising:
a plurality of chips being stacked with a TSV structure in which adjacent ones of the chips are connected to each other via a plurality of through electrodes, each of the chips including:
at least one input/output circuit, anda plurality of TSV array portions provided with the plurality of through electrodes so as to correspond to a plurality of channels, the plurality of TSV array portions including a first TSV array portion connected to the at least one input/output circuit so as to contribute to an input and an output of data depending upon the number of the chips being stacked and a second TSV array portion of pass-through, that is not connected to the at least one input/output circuit.