发明名称 |
RANK-MODULATION REWRITING CODES FOR FLASH MEMORIES |
摘要 |
Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. It aims at minimizing the cost of changing the state of the memory. In another aspect, multi-cells, used for storing data in flash memories is provided. Each transistor is replaced with a multi-cell of mm transistors connected in parallel. In yet another aspect, multi-permutations, are provided. The paradigm of representing information with permutations is generalized to the case where the number of cells in each level is a constant greater than one. In yet another aspect, rank-modulation rewriting schemes which take advantage of polar codes, are provided for use with flash memory. |
申请公布号 |
US2015324253(A1) |
申请公布日期 |
2015.11.12 |
申请号 |
US201514728749 |
申请日期 |
2015.06.02 |
申请人 |
California Institute of Technology ;Texas A&M University System |
发明人 |
Jiang Anxiao;En Gad Eyal;Bruck Jehoshua;Yaakobi Eitan |
分类号 |
G06F11/10;G11C29/52;G11C16/34 |
主分类号 |
G06F11/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method of operating a memory device, the method comprising:
receiving a new data set for a rank of a plurality of ranks to be stored in the memory device wherein the memory device comprises a plurality of cells; reading a current state of candidate cells within the plurality of cells wherein candidate cells are used to store the new data set; creating a binary representation of the plurality of cells used to store the new data set; using a WOM code to combine the binary representation with the new data set to create a binary WOM vector; modifying the binary WOM vector to equal quantities of 1's and 0's within the candidate cells creating a new data vector; writing the new data vector to the candidate cells. |
地址 |
Pasadena CA US |