| 发明名称 |
INDEPENDENT GATE VERTICAL FINFET STRUCTURE |
| 摘要 |
A semiconductor device includes a substrate extending in a first direction to define a substrate length and a second direction perpendicular to the first direction to define a substrate width. A first semiconductor fin is formed on an upper surface of the substrate. The first semiconductor fin extends along the second direction at a first distance to define a first fin width. A first gate channel is formed between a first source/drain junction formed in the substrate and a second source/drain junction formed in the first semiconductor fin. A first gate stack is formed on sidewalls of the first gate channel. A first spacer is interposed between the first gate stack and the first source/drain junction. |
| 申请公布号 |
US2015325576(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201514803523 |
申请日期 |
2015.07.20 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Liu Zuoguang;Yamashita Tenko;Yeh Chun-chen |
| 分类号 |
H01L27/088;H01L29/10;H01L29/423 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate extending in a first direction to define a substrate length and a second direction perpendicular to the first direction to define a substrate width; a first semiconductor fin formed on an upper surface of the substrate, the first semiconductor fin extending along the second direction a first distance to define a first fin width; a first gate channel formed between a first source/drain junction formed in the substrate and a second source/drain junction formed in the first semiconductor fin; a first gate stack formed on sidewalls of the first gate channel; and a first spacer interposed between the first gate stack and the first source/drain junction. |
| 地址 |
Armonk NY US |
