METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING BARRIER LAYERS FOR INTERCONNECT STRUCTURES

摘要

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a barrier layer overlying a metal line of a metallization layer above a semiconductor substrate using an atomic layer deposition (ALD) process and a physical vapor deposition (PVD) process. A liner-forming material is deposited overlying the barrier layer to form a liner. A conductive metal is deposited overlying the liner.

主权项

1. A method for fabricating an integrated circuit, the method comprising:
forming a barrier layer overlying a metal line of a metallization layer above a semiconductor substrate using an atomic layer deposition (ALD) process and a physical vapor deposition (PVD) process, wherein the barrier layer has a lower portion and a densified upper portion that has a greater density than the lower portion; depositing a liner-forming material overlying the barrier layer to form a liner; and depositing a conductive metal overlying the liner.