Interconnect structure and sputtering target

摘要

The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer. The present invention makes it possible to obtain an interconnect structure having excellent switching characteristics and high stress resistance, and in particular, showing a small variation of threshold voltage before and after the stress tests, and thereby having high stability.

主权项

1. An interconnect structure, comprising a gate insulator layer and an oxide semiconductor layer on a substrate,
wherein: the oxide semiconductor layer is a layered product comprising:
a first oxide semiconductor layer as an active layer comprising at least one Z group metal selected from the group consisting of In, Ga, Zn and Sn; anda second oxide semiconductor layer comprising Ga, at least one X group metal selected from the group consisting of In, Zn and Sn and at least one Y group metal selected from the group consisting of Al, Si, Ti, Ta, W and Ni; and the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer, wherein: when Al is not present as the at least one Y group metal, a total content of the Y group metal, relative to a total content of all the metals contained in the second oxide semiconductor layer, is from 0.5 to 8.0 atomic %; or when Al is present as the at least one Y group metal, a total content of the Y group metal, relative to a total content of all the metals contained in the second oxide semiconductor layer, is from 0.5 to 3.0 atomic %.