1T SRAM/DRAM

摘要

One-transistor (1T) volatile memory devices and manufacturing methods thereof are provided. The device includes a substrate having top and bottom surfaces and an isolation buffer layer disposed below the top substrate surface. The isolation buffer layer is an amorphized portion of the substrate. An area of the substrate between the isolation buffer layer and the top substrate surface serves as a body region of a transistor. The device also includes a transistor disposed over the substrate. The transistor includes a gate disposed on the top substrate surface, and first and second diffusion regions disposed in the body region adjacent to first and second sides of the gate.

主权项

1. A device comprising:
a substrate having top and bottom surfaces, wherein the substrate comprises a device region surrounded by an isolation region; an isolation buffer layer disposed in the device region and below the top substrate surface, wherein the isolation buffer layer is an amorphized portion of the substrate, and an area of the substrate between the isolation buffer layer and the top substrate surface serves as a body region of a transistor, and wherein the isolation region extends from the top substrate surface and partially into the isolation buffer layer; and a transistor disposed in the device region over the substrate, the transistor comprises
a gate disposed on the top substrate surface, andfirst and second diffusion regions disposed in the body region adjacent to first and second sides of the gate.