发明名称 圧電体素子及び圧電体デバイス
摘要 <p>A piezoelectric element includes a substrate, and at least a lower electrode layer, a piezoelectric film represented by a general formula of (NaxKyLiz)NbO3 (0@x@1, 0@y@1, 0@z@0.2, x+y+z=1); and an upper electrode layer successively formed on the substrate. The piezoelectric film has a crystal structure of pseudo-cubic crystal, tetragonal crystal, orthorhombic crystal, monoclinic crystal or rhombohedral crystal, or has a state that at least two of the crystal structures coexist. The piezoelectric film is preferentially oriented to certain specific axes that are not more than two axes of crystal axes in the crystal structures. At least one of domain crystal component of a c-axis orientation domain crystal component and an a-axis orientation domain crystal component exists as the components of the crystal axes oriented.</p>
申请公布号 JP5808262(B2) 申请公布日期 2015.11.10
申请号 JP20120011373 申请日期 2012.01.23
申请人 株式会社サイオクス 发明人 末永 和史;柴田 憲治;渡辺 和俊;野本 明;堀切 文正
分类号 H01L41/09;B41J2/045;B41J2/14;B41J2/16;C23C14/34;H01L41/187;H01L41/29;H01L41/39 主分类号 H01L41/09
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