Systems and methods for forming zirconium and/or hafnium-containing layers

摘要

A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR)4 with one or more zirconium and/or hafnium precursor compounds of the formula M(NR′R″)4, wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium.

主权项

1. A device comprising:
a substrate; a gate dielectric layer on the substrate, wherein the gate dielectric comprises mixed zirconium/hafnium silicates of the general formula ZraHfbSicOd, wherein d=2(a+b+c), each of a, b, c and d being greater than zero; and a titanium nitride gate on the gate dielectric layer; a nitrogen-doped barrier layer between the titanium nitride gate and the gate dielectric layer; wherein the gate dielectric layer is deposited by a vapor deposition process, and wherein the vapor deposition process further comprises providing at least one precursor compound of the formula M(NR′R″)4, wherein R, R′, and R″ are each independently an organic group and M is zirconium.