发明名称 |
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A memory device comprises a plurality of memory cells. At least one among the memory cells comprises: a plurality of transistors having a vertical-gate-all-around structure; and a plurality of active blocks. A portion of at least one among the active blocks acts as a source of one transistor among the transistors or a drain. |
申请公布号 |
KR20150125542(A) |
申请公布日期 |
2015.11.09 |
申请号 |
KR20140190824 |
申请日期 |
2014.12.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIAW JHON JHY |
分类号 |
H01L27/11;H01L29/423 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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