SEMICONDUCTOR CHIP HAVING DIFFERENT CONDUCTIVE PAD WIDTHS AND METHOD OF MAKING LAYOUT FOR SAME

摘要

A semiconductor chip includes a first conductive pad, a second conductive pad and a third conductive pad. The semiconductor chip also includes a first under bump metallurgy (UBM) structure, a second UBM structure, and a third UBM structure. The first conductive pad is electrically coupled to a circuit over a substrate, the second conductive pad is over a corner region of the substrate and free from being electrically coupled to the circuit over the substrate. The first conductive pad is closer to a geometric center of the semiconductor chip than the second conductive pad. The third conductive pad is over a region of the substrate between the first conductive pad and the second conductive pad. The third conductive pad has a pad width greater than a pad width of the first conductive pad and less than a pad width of the second conductive pad.

主权项

1. A semiconductor chip, comprising:
a plurality of conductive pads over a substrate, the plurality of conductive pads comprising:
a first conductive pad electrically coupled to a circuit over the substrate;a second conductive pad over a corner region of the substrate and free from being electrically coupled to the circuit over the substrate, the first conductive pad being positioned closer to a geometric center of the semiconductor chip than the second conductive pad; anda third conductive pad over a region of the substrate between the first conductive pad and the second conductive pad, the third conductive pad having a pad width greater than a pad width of the first conductive pad and less than a pad width of the second conductive pad; and a plurality of bump structures over the plurality of conductive pads, wherein the plurality of bump structures comprises:
a first bump structure having a first under bump metallurgy (UBM) structure over the first conductive pad, wherein the first conductive pad is substantially the same in shape compared to the first UBM structure;a second bump structure having a second UBM structure over the second conductive pad, wherein the second conductive pad is substantially the same in shape compared to the second UBM structure; anda third bump structure having a third UBM structure, wherein the third conductive pad is substantially the same in shape compared to the third UBM structure.