| 摘要 |
In order to provide a CIGS semiconductor layer, a method for manufacturing the same, and a CIGS photoelectric conversion device in which the method is used, said layer making it possible to achieve high photoelectric conversion efficiency by being used in the CIGS photoelectric conversion device, a CIGS semiconductor layer (3) has Cu, In, Ga, and Se, wherein the CIGS semiconductor layer (3) further contains Na and Bi, and is configured such that the Bi concentration is 5×1018 atom/cm3-1×1019 atom/cm3 and the Na concentration is 1×1016 atom/cm3-5×1018 atom/cm3. |
