发明名称 |
Integrated LED Light-Emitting Device and Fabrication Method Thereof |
摘要 |
An integrated LED light-emitting device includes: at least two mutually-isolated LED light-emitting epitaxial units having an upper and a lower surface, in which, the upper surface is a light-emitting surface; an electrode pad layer over the lower surface of the LED light-emitting epitaxial unit, with sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with no height difference; and the electrode pad layer is divided into a P electrode region and an N electrode region. The LED light-emitting epitaxial units constitute a series, parallel or series-parallel circuit. Embodiments disclosed herein can effectively improve the problems of package welding, electrode shading and poor wiring stability. |
申请公布号 |
US2015318444(A1) |
申请公布日期 |
2015.11.05 |
申请号 |
US201514748921 |
申请日期 |
2015.06.24 |
申请人 |
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
HUANG SHAOHUA;ZENG XIAOQIANG;CHAO CHIH-WEI |
分类号 |
H01L33/38;H01L21/78;H01L33/00;H01L33/44;H01L33/48;H01L27/15 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated LED light-emitting device, comprising:
at least two isolated LED light-emitting epitaxial units each having an upper and a lower surface, wherein the upper surface is a light-emitting surface; and an electrode pad layer over the lower surface, with a sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with substantially no height difference; wherein the electrode pad layer comprises a P electrode region and an N electrode region. |
地址 |
Xiamen CN |