发明名称 Integrated LED Light-Emitting Device and Fabrication Method Thereof
摘要 An integrated LED light-emitting device includes: at least two mutually-isolated LED light-emitting epitaxial units having an upper and a lower surface, in which, the upper surface is a light-emitting surface; an electrode pad layer over the lower surface of the LED light-emitting epitaxial unit, with sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with no height difference; and the electrode pad layer is divided into a P electrode region and an N electrode region. The LED light-emitting epitaxial units constitute a series, parallel or series-parallel circuit. Embodiments disclosed herein can effectively improve the problems of package welding, electrode shading and poor wiring stability.
申请公布号 US2015318444(A1) 申请公布日期 2015.11.05
申请号 US201514748921 申请日期 2015.06.24
申请人 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 HUANG SHAOHUA;ZENG XIAOQIANG;CHAO CHIH-WEI
分类号 H01L33/38;H01L21/78;H01L33/00;H01L33/44;H01L33/48;H01L27/15 主分类号 H01L33/38
代理机构 代理人
主权项 1. An integrated LED light-emitting device, comprising: at least two isolated LED light-emitting epitaxial units each having an upper and a lower surface, wherein the upper surface is a light-emitting surface; and an electrode pad layer over the lower surface, with a sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with substantially no height difference; wherein the electrode pad layer comprises a P electrode region and an N electrode region.
地址 Xiamen CN