RESISTANCE VARIATION TYPE NON-VOLATILE STORAGE ELEMENT, MANUFACTURING METHOD FOR THE SAME, AND RESISTANCE VARIATION TYPE NON-VOLATILE STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a resistance variation type non-volatile storage element that can reduce dispersion in characteristic which is caused by occurrence of a step at the end portion of a memory array region after CMP polishing due to the difference in pattern density when resistance variation type storage elements are arranged in the form of a memory array, and a method of manufacturing the same.SOLUTION: A resistance variation type non-volatile storage element has an interlayer insulating layer 106 formed above a substrate, a contact hole 107 penetrating through the first interlayer insulating layer 106, an adhesion layer 108 covering the side wall and bottom surface of the contact hole 107 and a part of the upper surface of the first interlayer insulating layer 106, a contact plug 109 which is filled in the contact hole 107 and provided at the lower side of the upper surface of the adhesive layer 108, a lower electrode 110 formed on the contact plug 109 and the adhesion layer 108 which covers a part of the upper surface of the interlayer insulating layer 106, a resistance variation layer 111 formed on the lower electrode 110, and an upper electrode 112 formed on the resistance variation layer 111.