| 摘要 |
Disclosed is a vertical separation method for a semiconductor substrate protection film, comprising: a suction and hold step (S10) in which, when a substrate (S) having a film attached thereto is loaded on a vacuum suction plate (10), the vacuum suction plate (11) sucks the substrate (S) and a clamper (21) clamps the edge of the substrate (S); a unit progress step (S20) in which a unit transfer shuttle (30) on which a flaw forming unit (40) and a taping unit (50) are mounted moves forward; a flaw formation step (S30) in which the flaw forming unit (40) forms a flaw section on the periphery of the film (F) attached to the substrate (S), wherein the flaw section assists in separating the film; a preliminary film separation step (S40) in which the taping unit (50) moves backward after taping the flaw section on the substrate (S) and separates the periphery of the film (F) from the substrate; a film separation step (S50) in which the taping unit (50) separates the film from the fixed substrate (S) while moving downward along a vertical frame (35) of the unit transfer shuttle (30); and a return step (S60) in which the taping unit (50) moves upward again and the unit transfer shuttle (40) moves backward and returns to the initial location. |
