| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which has high withstand voltage, low on-resistance and surge resistance.SOLUTION: A nitride semiconductor device comprises: a drift layer 2, a first base layer 3 and a second base layer 4, which are formed on a substrate 1 in this order; a first opening 5 which is formed on the second base layer 4 and pierces each GaN-based semiconductor layer to reach the drift layer 2; a first re-growth layer 6, a second re-growth layer and a third re-growth layer 7, which are formed in this order by re-growth so as to cover the first opening 5; a second opening 9 which is formed apart from the first opening 5 to reach the first base layer 3 after re-growth; an anode electrode 10 formed so as to cover the second opening 9; a two-dimensional electronic gas layer 8 which electrically contacts the anode electrode 10 in the second opening 9; and a cathode electrode 11 formed on a rear face side of the substrate 1. |
