| 摘要 |
A chemical-mechanical planarization process using a silicon oxynitride anti-reflective layer (S340), comprising: (S1) providing a semiconductor wafer, said wafer comprising a substrate (S310), an oxidation layer (S320) formed on the substrate (S310), a silicon nitride layer (S330) formed on the oxidation layer (S320), an anti-reflective layer (S340) formed on the silicon nitride layer (S330), a trench passing through the anti-reflective layer (S340) and extending into the substrate (S310), and a first silica layer (S350) filling the trench and covering the anti-reflective layer (S340); (S2) polishing the first silica layer (S350) down to the anti-reflective layer (S340); (S3) dry etching to remove the anti-reflective layer (S340); (S4) forming a second silica layer (S360) on the surface of the semiconductor wafer from which the anti-reflective layer (S340) has been removed; (S5) polishing the second silica layer (S360) down to the silicon nitride layer (S330); (S6) and, removing the silicon nitride layer (S330). |
