STACKED PHOTOELECTRIC TRANSDUCER

摘要

The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit (3) and a crystalline silicon-based photoelectric conversion unit (4) stacked thereon or vice versa, an amorphous photoelectric conversion layer (3i) included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 µm and less than 0.17 µm, a crystalline photoelectric conversion layer (4i) included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 µm and less than 1.0 µm, and a silicon oxide layer (3n) of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer (4p) of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.