Sputter apparatus, control device for sputter apparatus and film formation method

摘要

In an embodiment of the present invention, the following operations are performed while a substrate holder is being rotated at a fixed rotation speed with plasma being generated. Specifically, a first state where a substrate holding surface of the substrate holder is exposed to a target holder is formed to start a first deposition of divisional depositions, and a second state where the surface is shut off from the target holder is formed in T/X seconds after the start of the first divisional deposition. Moreover, the first state is formed to start an n-th deposition of the divisional depositions when a reference point set on the substrate holder arrived at a position rotated by (n−1)×360/X degrees from a position of the reference point located at the start of the targeted deposition, and the second state is formed in T/X seconds after the start of the n-th divisional deposition.

主权项

1. A sputter apparatus to generate plasma by applying a predetermined voltage to a target holder and to thereby form a film by sputtering a target held by the target holder comprising:
a process chamber; a substrate holder provided inside the process chamber, having a substrate holding surface for holding a substrate, and configured to be capable of rotating the substrate holding surface about a predetermined rotation axis; rotational drive means for controlling rotation of the substrate holder; substrate rotation angle detection means for detecting a rotation angle of the substrate holder; a target holder provided inside the process chamber and configured to be capable of holding the target, the target holder provided so that the rotation axis is located at a position different from a perpendicular line passing through the center point of the target; a shutter configured to switch between a first state where the substrate holding surface is exposed to the target holder and a second state where the substrate holding surface is shut off from the target holder; and control means for controlling the rotational drive means and the shutter, the control means being provided with a storage unit, wherein, provided that T seconds denotes a deposition time required to form a film thickness to be obtained in a targeted deposition, the sputter apparatus is configured to be capable of performing X (X is an integer of 2 or larger) divisional depositions to complete the targeted deposition, and wherein the storage unit of the control means stores a control program, the control program executing the steps of:
controlling the rotational drive means so that the substrate holder is rotated at a fixed rotation speed;controlling the shutter so that the first state is formed to start a first deposition of the divisional depositions, while the substrate holder is being rotated at the rotation speed under a condition where the plasma is being generated;controlling the shutter so that the second state is formed in T/X seconds after the start of the first divisional deposition, while the substrate holder is being rotated at the rotation speed under the condition where the plasma is being generated;controlling the shutter so that the first state is formed to start an n-th deposition of the divisional depositions when a reference point set on the substrate holder arrives at a position rotated by (n−1)×360/X degrees (n is an integer of 2 to X) from a position of the reference point located at the start of the targeted deposition, on the basis of a detection result obtained by the substrate rotation angle detection means, while the substrate holder is being rotated at the rotation speed under the condition where the plasma is being generated; andcontrolling the shutter so that the second state is formed in T/X seconds after the start of the n-th divisional deposition, while the substrate holder is being rotated at the rotation speed under the condition where the plasma is being generated.