| 发明名称 |
Semiconductor device |
| 摘要 |
A semiconductor device 100 includes a plurality of vertical transistors 50 provided to stand from a silicon substrate 1 and having a pillar lower diffusion layer 9 at their end portions on the silicon substrate 1 side, a metal contact plug 31 provided to stand from the silicon substrate 1 and connected to the pillar lower diffusion layer 9 of the plurality of vertical transistors 50, the plurality of vertical transistors 50 are uniformly arranged around the metal contact plug 31 and share the pillar lower diffusion layer 9 and the metal contact plug 31. |
| 申请公布号 |
US9178056(B2) |
申请公布日期 |
2015.11.03 |
| 申请号 |
US201213722125 |
申请日期 |
2012.12.20 |
| 申请人 |
PS4 Luxco S.a.r.l. |
发明人 |
Takaishi Yoshihiro |
| 分类号 |
H01L29/78;H01L29/66;H01L21/8234;H01L27/088 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a plurality of vertical transistors provided to stand from a semiconductor substrate and comprising a diffusion layer at their end portions on the semiconductor substrate side; a conductive plug provided to stand from the semiconductor substrate and connected to the diffusion layer of the plurality of vertical transistors, the plurality of vertical transistors being uniformly arranged near the conductive plug and sharing the diffusion layer and the conductive plug; and a dummy pillar provided to stand from the semiconductor substrate and comprising, over a side surface of the dummy pillar, a power feed gate electrode connected to the gate electrodes of the plurality of vertical transistors. |
| 地址 |
Luxembourg LU |
