发明名称 Semiconductor package having embedded semiconductor elements
摘要 A semiconductor package is disclosed, which includes: a carrier having at least an opening; a plurality of conductive traces formed on the carrier and in the opening; a first semiconductor element disposed in the opening and electrically connected to the conductive traces; a second semiconductor element disposed on the first semiconductor element in the opening; and a redistribution layer structure formed on the carrier and the second semiconductor element for electrically connecting the conductive traces and the second semiconductor element. Since the semiconductor elements are embedded and therefore positioned in the opening of the carrier, the present invention eliminates the need to perform a molding process before forming the redistribution layer structure and prevents the semiconductor elements from displacement.
申请公布号 US9177859(B2) 申请公布日期 2015.11.03
申请号 US201314013420 申请日期 2013.08.29
申请人 Siliconware Precision Industries Co., Ltd. 发明人 Chen Yan-Heng;Lin Chun-Tang;Liao Yan-Yi;Liu Hung-Wen;Chi Chieh-Yuan;Hsu Hsi-Chang
分类号 H01L23/31;H01L23/13;H01L23/538;H01L21/768;H01L23/498;H01L21/48;H01L25/065;H01L23/00;H01L21/56 主分类号 H01L23/31
代理机构 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. 代理人 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F.;Jensen Steven M.
主权项 1. A semiconductor package, comprising: a carrier having opposite first and second surfaces, with at least an opening having a bottom portion, formed on the first surface; a plurality of conductive traces formed on the bottom portion and side walls of the opening, and the first surface of the carrier; a first semiconductor element disposed in the opening, wherein the first semiconductor element has a first active surface with a plurality of first electrode pads and the first active surface, opposite to a first inactive surface, faces the bottom portion of the opening so as for the first electrode pads to be electrically connected to the conductive traces; a second semiconductor element disposed on the first semiconductor element, wherein the second semiconductor element has a second active surface with a plurality of second electrode pads exposed from the opening, and a second inactive surface, opposite to the second active surface, attached to the first inactive surface of the first semiconductor element; and a redistribution layer structure formed on the first surface of the carrier and the second active surface of the second semiconductor element for being electrically connected to the conductive traces and the second electrode pads on the second active surface of the second semiconductor element.
地址 Taichung TW