Semiconductor device and method for manufacturing same

摘要

A semiconductor device includes a first well and a second well provided within a semiconductor substrate, an isolation region disposed between the first well and the second well within the semiconductor substrate, a first wiring disposed on the first well, a second wiring disposed on the second well, a concave third wiring disposed on the isolation region, a buried insulating film disposed on the third wiring so as to fill the concave portion thereof, a plurality of fourth wirings disposed on the buried insulating film, and a contact plug disposed so as to electrically connect to at least one of the first and second wells.

主权项

1. A method for manufacturing a semiconductor device, comprising:
preparing a semiconductor substrate including a first well, a second well, and an isolation region between the first well and the second well with respect to a first direction; forming a first conductive film which is located on the first well and one end of which in the first direction is positioned on the isolation region, and a second conductive film which is located on the second well and one end of which in the first direction is positioned on the isolation region; forming a third conductive film, so as to extend from a space on the first conductive film through a space on the isolation region to a space on the second conductive film with respect to the first direction, and have a concave shape on the isolation region; forming a buried insulating film on the third conductive film, so as to fill a concave portion of the third conductive film on the isolation region; patterning the first to third conductive films and the buried insulating film to form a first wiring on the first well, a second wiring on the second well, and a concave third wiring and a buried insulating film on the isolation region; forming an interlayer insulating film on the semiconductor substrate; removing a portion of the interlayer insulating film until the buried insulating film is exposed; forming a contact plug, so as to penetrate through the interlayer insulating film, resulting in contacting with at least one of the first and second wells; and forming a plurality of fourth wirings, so as to contact with the buried insulating film on the third wiring.