| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration in device characteristics of a lamination device by an ambient atmosphere.SOLUTION: A method executes a first wafer SiN film formation step of forming an SiN film (14) on a bonding surface of a first wafer (10) on which a first semiconductor device (13) is formed, and a second wafer Si film formation step of forming an Si film (25) on a bonding surface of a second wafer (20) on which a second semiconductor device (23) is formed. After execution of these steps, the method executes a laminated wafer formation step of making the Si film side of the second wafer and the SiN film side of the first wafer be opposed to each other and then abut on each other in a state that the first semiconductor device and the second semiconductor device are made correspond to each other. Thereby, SiN and Si are bonded by chemical coupling, and a laminated wafer (50) is formed. The laminated wafer is divided into individual lamination devices. |
