SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To eliminate overetching of an insulation film on a side part of a fuse to prevent residual of a resist film.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a first insulation film 85 so as to cover an electrode pad 81 and a fuse 82 which are formed on an interlayer insulation film 61 above a substrate to make a film thickness on the electrode pad 81 thinner than a film thickness on the interlayer insulation film; subsequently forming a resist film 88 above the first insulation film 85; and simultaneously forming a first opening 90A for exposing the electrode pad 81 by using the resist film 88 as a mask and a second opening 90B by removing at least a part of the first insulation film 85 on the fuse 82.