| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a reduced area.SOLUTION: A semiconductor device includes a first transistor 490 and a second transistor 491. The first transistor 490 includes a first conductor 421b and a second conductor 421b arranged with a distance therebetween, a first insulator 432 over the first conductor and the second conductor, a semiconductor 406a over the first insulator, a second insulator 411 over the semiconductor, a third conductor 426 over the second insulator, and a fourth conductor 416a and a fifth conductor 416b that are in contact with the semiconductor. The first conductor 421b includes a region not overlapping with the third conductor 426 with the semiconductor 406a therebetween, and the second conductor 421a includes a region overlapping with the third conductor 426 with the semiconductor 406b therebetween. One of a source electrode or a drain electrode 417a of the second transistor 491 is electrically connected to the third conductor 426 of the first transistor 490. |
