发明名称 スパッタリングターゲット
摘要 <p>A sintered sputtering target having a structure in which metal phases and oxide phases are homogeneously dispersed, the sputtering target being characterized in that the metal phases contain Co, Pt and Mn as components and the oxide phases contain an oxide having at least Mn as a constituent. The sputtering target has the excellent effects of being able to reduce the amount of particles generated during sputtering and of being able to improve yield during film deposition.</p>
申请公布号 JP5801496(B2) 申请公布日期 2015.10.28
申请号 JP20140533302 申请日期 2014.01.20
申请人 发明人
分类号 C23C14/34;G11B5/65;G11B5/851 主分类号 C23C14/34
代理机构 代理人
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