SILICON PRECURSOR, METHOD OF FORMING A LAYER USING THE SAME AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

The present invention discloses a silicon precursor, a method for forming a thin film using the same and a producing method of a semiconductor device using the same. The silicon precursor comprises a silane group having two or more silicons and exhibits high and uniform adsorption property on a surface of a film such as silicon, an oxide film and a nitride film or the like which are used a lot when producing semiconductors.